Author:
Xu Jin ,Li Fu-Long ,Yang De-Ren ,
Abstract
The grown-in oxygen precipitates in conventional Czochralski (CZ) silicon and nitrogen-doped Czochralski (NCZ) silicon have been investigated by means of transmission electron microscopy (TEM). Tiny oxygen precipitates about 5nm in size were observed in the NCZ specimens. It is believed that the oxygen precipitates may have grown from the heterogeneous nuclei of nitrogen-related complexes formed at a low temperature of 650℃.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Cited by
7 articles.
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