Investigation of copper precipitation in denuded zone in Czochralski silicon
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Published:2013
Issue:7
Volume:62
Page:076103
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ISSN:1000-3290
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Container-title:Acta Physica Sinica
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language:
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Short-container-title:Acta Phys. Sin.
Author:
Zhang Guang-Chao ,Xu Jin , ,
Abstract
The precipitation behavior of copper in denuded zone (DZ) of Czochralski silicon has been systematically investigated by means of etching and optical microscopy (OM). Firstly, the samples were treated in a conventional furnace by high-low-high annealing for the formation of denuded zone. Subsequently, copper contamination was introduced at different temperatures. Finally, samples were treated with rapid thermal annealing (RTA) and conventional furnace annealing separately. It was found that, copper precipitates could be observed in DZ through OM only in the samples which experienced RTA followed by contamination in 900 ℃ and 1100 ℃. This indicates that the out-diffusion of vacancy which is produced in the process of RTA is the main cause for the copper precipitation in DZ.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Reference30 articles.
1. ThomPson S, Parthasarathy S 2006 MaterialsThday 9 20
2. Liu B C, Huang T Y 2006 China Materials Engineering Dictionary (Vol. 11) (beijing: Chemical Industry Press) p116-119 (in Chinese) [柳百成, 黄天佑 2006 中国材料工程大典(11 卷) (北京: 化学工业出版社) 第116–119页]
3. Bergholz W, Gilles D 2000 Phys. Stat. Sol. (b) 5 222
4. Shimura F, Willardson R K 1994 Academic Press 41
5. Isomae S, Aoki S, Watanabe K 1983 J. Appl. Phys. Lett. 55 817