Deposition of high‐quality TiN using tetra‐isopropoxide titanium in an electron cyclotron resonance plasma process-Reference-Cited by-同舟云学术

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Deposition of high‐quality TiN using tetra‐isopropoxide titanium in an electron cyclotron resonance plasma process

Published:1995-11-13 Issue:20 Volume:67 Page:2934-2935
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Weber A.,Poeckelmann R.,Klages C.‐P.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.114847

Reference8 articles.

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. CVD and precursor chemistry of transition metal nitrides;Coordination Chemistry Reviews;2013-07

2. Dual threshold diode based on the superconductor-to-insulator transition in ultrathin TiN films;Applied Physics Letters;2013-01-28

3. A spectroscopic study into the decomposition process of titanium isopropoxide in the nitrogen–hydrogen 100kHz low-pressure plasma;Vacuum;2008-02

4. Deposition of TiN Films by Novel Filter Cathodic Arc Technique;Chinese Physics Letters;2006-05-30

5. Deposition of hard metal nitride-like coatings in an electron cyclotron resonance discharge;Surface and Coatings Technology;2004-01

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