Dual threshold diode based on the superconductor-to-insulator transition in ultrathin TiN films-Reference-Cited by-同舟云学术

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Dual threshold diode based on the superconductor-to-insulator transition in ultrathin TiN films

Published:2013-01-28 Issue:4 Volume:102 Page:042601
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Baturina Tatyana I.,Kalok David,Bilušić Ante,Vinokur Valerii M.,Baklanov Mikhail R.,Gutakovskii Anton K.,Latyshev Alexander V.,Strunk Christoph

Funder

U.S. Department of Energy

Russian Foundation for Basic Research

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4789510

Reference54 articles.

1. TiN and TaN as diffusion barriers in metallizations to silicon semiconductor devices

2. Oxygen in titanium nitride diffusion barriers

3. Multilayer TiC/TiN diffusion barrier films for copper

4. Schottky barrier contacts of titanium nitride on n‐type silicon

5. Titanium nitride Schottky‐barrier contacts to GaAs

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1. Effective work function of TiN films: Profound surface effect and controllable aging process;AIP Advances;2022-12-01

2. Titanium nitride thin film for temperature sensing and its conductive mechanism in the cryogenic region;Semiconductor Science and Technology;2018-10-01

3. Charge Berezinskii-Kosterlitz-Thouless transition in superconducting NbTiN films;Scientific Reports;2018-03-06

4. Superconductor-insulator transition in disordered Josephson-junction chains;Physical Review B;2017-08-11

5. Reentrant Resistive Behavior and Dimensional Crossover in Disordered Superconducting TiN Films;Scientific Reports;2017-05-11

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