Hybrid top-gate transistors based on ink-jet printed zinc tin oxide and different organic dielectrics
Author:
Affiliation:
1. Institute of Materials Science, Technische Universität Darmstadt, 64287 Darmstadt, Germany
Funder
Helmholtz-Gemeinschaft
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5009056
Reference33 articles.
1. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances
2. Molybdenum as a contact material in zinc tin oxide thin film transistors
3. Localized tail state distribution and hopping transport in ultrathin zinc-tin-oxide thin film transistor
4. Top-gate zinc tin oxide thin-film transistors with high bias and environmental stress stability
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