Realization and AC modeling of electronic circuits with water-gated field effect transistors (WG-FETs) based on gate probe distance-Reference-Cited by-同舟云学术

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Realization and AC modeling of electronic circuits with water-gated field effect transistors (WG-FETs) based on gate probe distance

Published:2018-10-09 Issue:11 Volume:28 Page:115017
ISSN:0960-1317
Container-title:Journal of Micromechanics and Microengineering
language:
Short-container-title:J. Micromech. Microeng.

Author:

Sonmez Bedri Gurkan^ORCID,Ertop Ozan^ORCID,Mutlu Senol^ORCID

Funder

Türkiye Bilimsel ve Teknolojik Araştirma Kurumu

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,Electronic, Optical and Magnetic Materials

Link

http://iopscience.iop.org/article/10.1088/1361-6439/aae39e/pdf

Reference41 articles.

1. Electric-double-layer field-effect transistors with ionic liquids

2. Electrolyte-Gated Transistors for Organic and Printed Electronics

3. Electric double-layer transistors: a review of recent progress

4. Transport phenomena in nanofluidics

5. Recent Advances in Continuum Modeling of Interfacial and Transport Phenomena in Electric Double Layer Capacitors

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1. Fabrication and characterization of planar electrolyte gated field effect transistor with magnetic electrodes;Materials Science in Semiconductor Processing;2023-12

2. Thermoplastic microfluidic bioreactors with integrated electrodes to study tumor treating fields on yeast cells;Biomicrofluidics;2020-05

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