Effects of substrate temperature on the orientation of ultrahigh vacuum evaporate Si and Ge films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95771
Reference12 articles.
1. Thin‐film transistors on molecular‐beam‐deposited polycrystalline silicon
2. Polysilicon transistors on glass by pulsed‐laser annealing
3. Low‐temperature formation of polycrystalline silicon films by molecular beam deposition
4. Crystallization temperature of ultrahigh vacuum deposited silicon films
5. Structure of chemically deposited polycrystalline-silicon films
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