Fermi-level pinning and charge neutrality level in nitrogen-doped Ge2Sb2Te5: Characterization and application in phase change memory devices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3475721
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4. Crystal structure of GeTe and Ge2Sb2Te5 meta-stable phase
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2. Effects of Oxygen Plasma Treatment on Fermi‐Level Pinning and Tunneling at the Metal–Semiconductor Interface of WSe2 FETs;Advanced Electronic Materials;2023-01-22
3. Review of electrical contacts to phase change materials and an unexpected trend between metal work function and contact resistance to germanium telluride;Journal of Vacuum Science & Technology A;2020-09
4. Phase dependence of Schottky barrier heights for Ge–Sb–Te and related phase-change materials;Journal of Applied Physics;2020-04-21
5. Electronic Structures of Ge2Sb2Te5/Co2FeX (X: Al, Si) Interfaces for Phase Change Spintronics;ACS Omega;2018-10-31
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