Photoluminescence study of carrier transfer among vertically aligned double-stacked InAs/GaAs quantum dot layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1510157
Reference16 articles.
1. Exciton localization and temperature stability in self‐organized InAs quantum dots
2. Carrier thermal escape and retrapping in self-assembled quantum dots
3. Temperature dependence of photoluminescence spectra in InAs/GaAs quantum dot superlattices with large thicknesses
4. Inhibited carrier transfer in ensembles of isolated quantum dots
5. Capture and thermal re-emission of carriers in long-wavelength InGaAs/GaAs quantum dots
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2. Carrier escape mechanism in laterally correlated InAs sub-monolayer quantum dots using temperature dependent photoluminescence;Journal of Luminescence;2019-11
3. Two-state lasing at room temperature in InAs/InP quantum dots;Journal of Applied Physics;2019-10-07
4. Photoluminescence from InAs Quantum Dots Buried Under Low‐Temperature‐Grown GaAs;physica status solidi (b);2019-01-11
5. Carrier tunneling and thermal escape in asymmetric double quantum dots;Applied Surface Science;2018-10
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