Investigation of the properties of organometallic vapor phase epitaxially grown AlGaAs/GaAs heterostructures using Raman scattering
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96236
Reference10 articles.
1. Growth and characterization of AlGaAs/GaAs quantum well lasers
2. High external efficiency (36%) 5‐μm mesa isolated GaAs quantum well laser by organometallic vapor phase epitaxy
3. Improved 2DEG mobility in selectively doped GaAs/N-AlGaAs grown by MOCVD using triethyl organometallic compounds
4. Growth of heterostructures for HEMT devices
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1. A Structural Study of InP/In0.61Ga0.39As/InP Quantum Well Using Tem;MRS Proceedings;1993-01
2. Composition analysis of thin AlxGa1−xAs layers with TEM and SIMS;Journal of Materials Research;1990-03
3. References;Thin Films by Chemical Vapour Deposition;1990
4. Systematic studies on the effect of growth interruptions for GaInAs/InP quantum wells grown by atmospheric pressure organometallic vapor‐phase epitaxy;Journal of Applied Physics;1989-12
5. Multiple quantum well structures and high-power lasers of gaas- algaas grown by metalorganic vapor phase epitaxy (MOVPE)1;Fiber and Integrated Optics;1987-01
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