A Structural Study of InP/In0.61Ga0.39As/InP Quantum Well Using Tem
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Engineering
Reference7 articles.
1. InAsP islands at the lower interface of InGaAs/InP quantum wells grown by metalorganic chemical vapor deposition
2. Surface migration study of atoms and formation of truly-smooth top and bottom heterointerfaces in GaAsAlAs quantum wells by temperature-switched technique in molecular beam epitaxy
3. Investigation of the properties of organometallic vapor phase epitaxially grown AlGaAs/GaAs heterostructures using Raman scattering
4. TDEG in In0.53Ga0.47As-InP heterojunction grown by chloride VPE
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