Systematic studies on the effect of growth interruptions for GaInAs/InP quantum wells grown by atmospheric pressure organometallic vapor‐phase epitaxy-Reference-Cited by-同舟云学术

Systematic studies on the effect of growth interruptions for GaInAs/InP quantum wells grown by atmospheric pressure organometallic vapor‐phase epitaxy

Published:1989-12 Issue:11 Volume:66 Page:5376-5383
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Wang T. Y.,Reihlen E. H.,Jen H. R.,Stringfellow G. B.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.343681

Reference57 articles.

1. TDEG in In0.53Ga0.47As-InP heterojunction grown by chloride VPE

2. Transient transport in bulk Ga0.47ln0.53As and the two‐dimensional electron gas in Ga0.47ln0.53As/Al0.48ln0.52As

3. High-current-gain InGaAs/InP double-heterojunction bipolar transistors grown by metal organic vapor phase epitaxy

4. High‐speed performance of InP/In0.53Ga0.47As/InP double‐heterojunction bipolar transistors

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