Author:
Razavi Pedram,Fagas Giorgos
Subject
Physics and Astronomy (miscellaneous)
Reference25 articles.
1. Influence of channel material properties on performance of nanowire transistors
2. Simulation of junctionless Si nanowire transistors with 3 nm gate length
3. Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors
4. Nanometre-scale electronics with III–V compound semiconductors
5. M. Bescond, N. Cavassilas, K. Kalna, K. Nehari, L. Raymond, J. L. Autran, M. Lannoo, and A. Asenov, in IEEE International Electron Devices Meeting (IEDM Technical Digest), Washington, DC, 5 December 2005, pp. 526–529.
Cited by
22 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献