Atomic-layer-deposited HfO2/Al2O3 laminated dielectrics for bendable Si nanomembrane based MOS capacitors-Reference-Cited by-同舟云学术

Atomic-layer-deposited HfO2/Al2O3 laminated dielectrics for bendable Si nanomembrane based MOS capacitors

Published:2019-04-08 Issue:14 Volume:114 Page:142903
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Liu Chen¹,Wang Zhuofan¹^ORCID,Lu Hongliang¹,Zhang Yuming¹,Liu Dong²^ORCID,Zhang Yi-Men¹,Ma Zhenqiang²^ORCID,Zhao Jing¹,Guo Lixin³^ORCID,Xiong Kanglin⁴

Affiliation:

1. School of Microelectronics and Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China

2. Department of Electrical and Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison, Wisconsin 53706, USA

3. School of Physics and Optoelectronic Engineering, Xidian University, Xi'an 710071, China

4. Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China

Funder

Frontier Science and Technology Innovation

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5051626

Reference22 articles.

1. Flexible MISFET Devices From Transfer Printed Si Microwires and Spray Coating

2. Epitaxial lift-off of electrodeposited single-crystal gold foils for flexible electronics

3. Flexible Sensing Electronics for Wearable/Attachable Health Monitoring

4. Strain engineering and mechanical assembly of silicon/germanium nanomembranes

5. Performance Degradation of Flexible Si Nanomembrane Transistors With Al2O3 and SiO2 Dielectrics Under Mechanical Stress

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nanolaminated HfO ₂ /Al ₂ O ₃ Dielectrics for High‐Performance Silicon Nanomembrane Based Field‐Effect Transistors on Biodegradable Substrates;Advanced Materials Interfaces;2022-10-03

2. Interfacial Permittivity Characterization of Heterogeneous Dielectric Bi-Layers;IEEE Transactions on Electron Devices;2022-04

3. Improvement of the Charge Retention of a Non-Volatile Memory by a Bandgap-Engineered Charge Trap Layer;ECS Journal of Solid State Science and Technology;2021-12-01

4. Effect of Gd and Si co-doping on the band alignment and electrical properties of HfO2 dielectric films prepared by atomic layer deposition;Journal of Materials Science: Materials in Electronics;2021-01-23

5. Modulation of the microstructure, optical and electrical properties of sputtering-driven Yb2O3 gate dielectrics by sputtering power and annealing treatment;Applied Surface Science;2020-04