Strain-induced fundamental optical transition in (In,Ga)As/GaP quantum dots-Reference-Cited by-同舟云学术

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Strain-induced fundamental optical transition in (In,Ga)As/GaP quantum dots

Published:2014-01-06 Issue:1 Volume:104 Page:011908
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Robert C.,Nestoklon M. O.,Pereira da Silva K.,Pedesseau L.,Cornet C.,Alonso M. I.,Goñi A. R.,Turban P.,Jancu J.-M.,Even J.,Durand O.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4861471

Reference46 articles.

1. GaP-nucleation on exact Si (001) substrates for III/V device integration

2. Nucleation-related defect-free GaP/Si(100) heteroepitaxy via metal-organic chemical vapor deposition

3. Growth of low defect density GaP layers on Si substrates within the critical thickness by optimized shutter sequence and post-growth annealing

4. Defects limitation in epitaxial GaP on bistepped Si surface using UHVCVD–MBE growth cluster

5. Direct-band-gap Ga(NAsP)-material system pseudomorphically grown on GaP substrate

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modeling electronic and optical properties of III–V quantum dots—selected recent developments;Light: Science & Applications;2022-01-17

2. Dynamic polarization of electron spins in indirect band gap (In,Al)As/AlAs quantum dots in a weak magnetic field: Experiment and theory;Physical Review B;2021-09-07

3. Electronic states of (InGa)(AsSb)/GaAs/GaP quantum dots;Physical Review B;2019-09-13

4. Strain Engineered Band Structure and Optical Properties of Confined GaAs Quantum Dots;The Journal of Physical Chemistry C;2017-03-06

5. Electronic wave functions and optical transitions in (In,Ga)As/GaP quantum dots;Physical Review B;2016-08-30

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