Phosphorus ion implantation induced intermixing of InGaAs‐InP quantum well structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101316
Reference15 articles.
1. Low internal loss separate confinement heterostructure InGaAs/InGaAsP quantum well laser
2. High‐power operation in InGaAs separate confinement heterostructure quantum well laser diodes
3. Self‐electro‐optic effect device and modulation convertor with InGaAs/InP multiple quantum wells
4. Electron and hole impact ionization coefficients in GaAs‐AlxGa1−xAs superlattices
5. Thermal stability of InGaAs/InP quantum well structures grown by gas source molecular beam epitaxy
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1. Bandgap Control for Intersubband Transition in InGaAs/AlAsSb Coupled Double Quantum Wells;IEEE Photonics Technology Letters;2013-08
2. Intersubband All-Optical Switch with Bandgap Control of InGaAs/AlAsSb Quantum Wells;2013 18th OptoElectronics and Communications Conference held jointly with 2013 International Conference on Photonics in Switching;2013
3. 9.2 Laser diodes in the visible spectral range: Red-emitting laser diodes;Laser Systems;2011
4. Fast Tuneable InGaAsP DBR Laser Using Quantum-Confined Stark-Effect-Induced Refractive Index Change;IEEE Journal of Selected Topics in Quantum Electronics;2007
5. Photoreflectance investigations of quantum well intermixing processes in compressively strained InGaAsP∕InGaAsP quantum well laser structures emitting at 1.55μm;Journal of Applied Physics;2006-07
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