Electron and hole impact ionization coefficients in GaAs‐AlxGa1−xAs superlattices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95948
Reference9 articles.
1. Enhancement of electron impact ionization in a superlattice: A new avalanche photodiode with a large ionization rate ratio
2. Staircase solid-state photomultipliers and avalanche photodiodes with enhanced ionization rates ratio
3. Multiplication noise in uniform avalanche diodes
4. Band-gap engineering via graded gap, superlattice, and periodic doping structures: Applications to novel photodetectors and other devices
5. Experimental determination of impact ionization coefficients in
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1. Avalanche noise characteristics of single Al/sub x/Ga/sub 1-x/As(0.3;IEEE Journal of Quantum Electronics;2005-01
2. Multiplication and excess noise in AlxGa1−xAs/GaAs multilayer avalanche photodiodes;Journal of Applied Physics;2003-08-15
3. Multiplication noise of AlxGa1−xAs avalanche photodiodes with high Al concentration and thin multiplication region;Applied Physics Letters;2001-06-11
4. Avalanche multiplication in submicron AlxGa1−xAs/GaAs multilayer structures;Journal of Applied Physics;2000-09
5. Invited Review: Superlattice and multiquantum well avalanche photodetectors: physics, concepts and performance;Superlattices and Microstructures;2000-08
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