Self‐electro‐optic effect device and modulation convertor with InGaAs/InP multiple quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99315
Reference8 articles.
1. Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect
2. Electric field dependence of optical absorption near the band gap of quantum-well structures
3. High‐speed optical modulation with GaAs/GaAlAs quantum wells in ap‐i‐ndiode structure
4. Novel hybrid optically bistable switch: The quantum well self‐electro‐optic effect device
5. The quantum well self-electrooptic effect device: Optoelectronic bistability and oscillation, and self-linearized modulation
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1. High speed optical modulation in Ge quantum wells using quantum confined stark effect;Frontiers of Optoelectronics;2012-01-06
2. Quantum-Confined Stark Effect in Ge/SiGe Quantum Wells on Si;IEEE Journal of Selected Topics in Quantum Electronics;2010-01
3. All-optical reflection modulator using a nonlinear heteronipi structure within an asymmetric Fabry–Perot optical cavity;Applied Physics Letters;1999-06-14
4. Hole transport over heterobarriers in InP based multiple quantum well structures;Applied Physics Letters;1998-03-16
5. Optical bistability in symmetrically strained (GaIn)As/Ga(PAs) superlattices;Applied Physics Letters;1996-07-15
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