GaAs on Si(111)—crystal shape and strain relaxation in nanoscale patterned growth
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1984100
Reference11 articles.
1. New approach to the high quality epitaxial growth of lattice‐mismatched materials
2. Elastic misfit stress relaxation in heteroepitaxial SiGe/Si mesa structures
3. Theory of Strain Relaxation for Epitaxial Layers Grown on Substrate of a Finite Dimension
4. Strain-relieved, dislocation-free InxGa1−xAs∕GaAs(001) heterostructure by nanoscale-patterned growth
5. Heteroepitaxial selective growth of InxGa1−xAs on SiO2-patterned GaAs(001) by molecular beam epitaxy
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1. A review of recent progress in heterogeneous silicon tandem solar cells;Journal of Physics D: Applied Physics;2018-03-02
2. Kinetic growth mode of epitaxial GaAs on Si(001) micro-pillars;Journal of Applied Physics;2016-12-28
3. Nanoscale Patterned Growth Assisted by Surface Out-Diffusion of Adatoms from Amorphous Mask Films in Molecular Beam Epitaxy;Crystal Growth & Design;2016-06-03
4. Nanoscale Growth of GaAs on Patterned Si(111) Substrates by Molecular Beam Epitaxy;Crystal Growth & Design;2013-12-24
5. Study of the wurtzite zinc-blende mixed-structured GaAs nanocrystals grown on Si (111) substrates;Philosophical Magazine;2013-03
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