Strain-relieved, dislocation-free InxGa1−xAs∕GaAs(001) heterostructure by nanoscale-patterned growth
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1811799
Reference11 articles.
1. New approach to the high quality epitaxial growth of lattice‐mismatched materials
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5. Nanoscale selective growth of GaAs by molecular beam epitaxy
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1. Predicted lattice-misfit stresses in a gallium-nitride (GaN) film;SPIE Proceedings;2017-02-16
2. Predicted Thermal- and Lattice-Mismatch Stresses;Handbook of Crystal Growth;2015
3. Selective area growth of InP on lithography-free, nanopatterned GaAs(001) by metalorganic chemical vapor deposition;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2014-01
4. Lattice-Misfit Stresses in a Circular Bi-Material Gallium-Nitride Assembly;Journal of Applied Mechanics;2012-11-19
5. Stresses in bi-material GaN assemblies;Journal of Applied Physics;2011-10
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