Elastic misfit stress relaxation in heteroepitaxial SiGe/Si mesa structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108099
Reference9 articles.
1. Stress‐related problems in silicon technology
2. Elastic strain and misfit dislocation density in Si0.92Ge0.08 films on silicon substrates
3. Structure, properties and applications of GexSi1-xstrained layers and superlattices
4. Elimination of dislocations in heteroepitaxial MBE and RTCVD Ge x Si1-x grown on patterned Si substrates
5. A study of the effect of misfit‐induced strain on the kinetics of solid phase epitaxy in the Si1−xGexon 〈001〉 Si system
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