Dislocation reduction of InAs nanofins prepared on Si substrate using metal-organic vapor-phase epitaxy
Author:
Publisher
Springer Science and Business Media LLC
Subject
Condensed Matter Physics,General Materials Science
Link
http://link.springer.com/content/pdf/10.1186/1556-276X-7-642.pdf
Reference31 articles.
1. Chau R, Datta S, Doczy M, Doyle B, Jin B, Kavalieros J, Majumdar A, Metz M, Radosavljevic M: Benchmarking nanotechnology for high-performance and low-power logic transistor applications. IEEE Trans Nanotechnol 2005, 4: 153–158. 10.1109/TNANO.2004.842073
2. Blekker K, Münstermann B, Matiss A, Do QT, Regolin I, Brockerhoff W, Prost W, Tegude F-J: High-frequency measurements on InAs nanowire field-effect transistors using coplanar waveguide contacts. IEEE Trans Nanotechnol 2010, 9: 432–437.
3. Datta S, Dewey G, Fastenau JM, Hudait MK, Loubychev D, Liu WK, Radosavljevic M, Rachmady W, Chau R: Ultrahigh-speed 0.5 V supply voltage In0.7Ga0.3As quantum-well transistors on silicon substrate. IEEE Electron Device Lett 2007, 28: 685–687.
4. Ihn SG, Song JI, Kim YH, Lee JY, Ahn IH: Growth of GaAs nanowires on Si substrates using a molecular beam epitaxy. IEEE Trans Nanotechnol 2007, 6: 384–389.
5. Soci C, Bao XY, Aplin DPR, Wang D: A systematic study on the growth of GaAs nanowires by metal-organic chemical vapor deposition. Nano Lett 2008, 8: 4275–4282. 10.1021/nl801986r
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