The decrease of ‘‘random telegraph signal’’ noise in metal‐oxide‐semiconductor field‐effect transistors when cycled from inversion to accumulation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351145
Reference6 articles.
1. 1/ fnoise reduction of metal‐oxide‐semiconductor transistors by cycling from inversion to accumulation
2. Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noise
3. Discrete Resistance Switching in Submicrometer Silicon Inversion Layers: Individual Interface Traps and Low-Frequency (1f?) Noise
4. Capture and emission kinetics of individual Si:SiO2interface states
5. Experimental studies on 1/f noise
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