Photoluminescence from modulation doped AlGaAs/ low‐temperature molecular beam epitaxy‐grown GaAs heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.360359
Reference13 articles.
1. As a general reference, see: J. Electron. Mater.22(1993).JECMA50361-5235
2. Arsenic precipitates and the semi‐insulating properties of GaAs buffer layers grown by low‐temperature molecular beam epitaxy
3. New MBE buffer used to eliminate backgating in GaAs MESFETs
4. Effect of a GaAs buffer layer grown at low substrate temperatures on a high‐electron‐mobility modulation‐doped two‐dimensional electron gas
5. Subpicosecond carrier lifetime in GaAs grown by molecular beam epitaxy at low temperatures
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Luminescence of GaAs/AlGaAs core–shell nanowires grown by MOVPE using tertiarybutylarsine;Journal of Crystal Growth;2008-11
2. Photoreflectance and photoluminescence spectroscopy of low‐temperature GaAs grown by molecular‐beam epitaxy;Journal of Applied Physics;1996-01
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