Photoreflectance and photoluminescence spectroscopy of low‐temperature GaAs grown by molecular‐beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.360848
Reference18 articles.
1. Structural properties of As‐rich GaAs grown by molecular beam epitaxy at low temperatures
2. Arsenic precipitates and the semi‐insulating properties of GaAs buffer layers grown by low‐temperature molecular beam epitaxy
3. Anomalies in annealed LT-GaAs samples
4. Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperatures
5. Native donors and acceptors in molecular‐beam epitaxial GaAs grown at 200 °C
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1. Optical properties of GaAs1−xBix/GaAs quantum well structures grown by molecular beam epitaxy on (100) and (311)B GaAs substrates;Semiconductor Science and Technology;2018-11-13
2. Investigation of the optical properties of GaAs with δ-Si doping grown by molecular-beam epitaxy at low temperatures;Semiconductors;2015-07
3. Photoreflectance study of the fundamental optical properties of (Ga,Mn)As epitaxial films;Physical Review B;2011-06-07
4. Optimization of photomixers and antennas for continuous-wave terahertz emission;IEEE Journal of Quantum Electronics;2005-05
5. Photoreflectance characterization of the plasma-induced damage in Si substrate;Journal of Applied Physics;2000-09
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