Effect of a GaAs buffer layer grown at low substrate temperatures on a high‐electron‐mobility modulation‐doped two‐dimensional electron gas
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101358
Reference5 articles.
1. Backgating and light sensitivity in ion-implanted GaAs integrated circuits
2. Backgating in GaAs MESFET's
3. New MBE buffer used to eliminate backgating in GaAs MESFETs
4. Improved Electron Mobility Higher than 106cm2/Vs in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE
5. GaAs structures with electron mobility of 5×106cm2/V s
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1. The characteristics of InGaAs/GaAs modulation-doped photodetectors with two absorption bands;Solid-State Electronics;2003-08
2. Photoluminescence characterization of Si-doped low-temperature grown GaAs and GaAs/AlGaAs multiple quantum wells;Journal of Crystal Growth;2000-01
3. Band-bending effect of low temperature GaAs on a pseudomorphic modulation-doped field-effect transistor;Journal of Electronic Materials;1999-12
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5. Low temperature MBE of GaAs: A theoretical investigation of RHEED Oscillations;Journal of Electronic Materials;1999-07
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