Deep levels in as-grown and electron-irradiated n-type GaN studied by deep level transient spectroscopy and minority carrier transient spectroscopy-Reference-Cited by-同舟云学术

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Deep levels in as-grown and electron-irradiated n-type GaN studied by deep level transient spectroscopy and minority carrier transient spectroscopy

Published:2016-03-07 Issue:9 Volume:119 Page:095707
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Duc Tran Thien¹²,Pozina Galia¹^ORCID,Son Nguyen Tien¹,Kordina Olof¹,Janzén Erik¹,Ohshima Takeshi³,Hemmingsson Carl¹

Affiliation:

1. Department of Physics, Chemistry and Biology (IFM), Linköping University, S-581 83 Linköping, Sweden

2. School of Engineering Physics, Hanoi University of Science and Technology, 1 Dai Co Viet Road, Hanoi, Vietnam

3. Japan Atomic Energy Agency (JAEA), Takasaki, Gunma 370-1292, Japan

Funder

Energimyndigheten (Swedish Energy Agency)

Vetenskapsrådet (VR)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4943029

Reference22 articles.

1. Radiation-induced defects in GaN bulk grown by halide vapor phase epitaxy

2. Deep levels and irradiation effects in n-GaN

3. Electron-irradiation-induced deep level in n-type GaN

4. On the main irradiation-induced defect in GaN

5. Characterization of electron-irradiated n-GaN

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Deep-level traps in as-grown and electron-irradiated homo-epitaxial n-GaN layers grown by MOVPE;Microelectronic Engineering;2023-04

2. Hole traps related to nitrogen displacement in p-type GaN grown by metalorganic vapor phase epitaxy on freestanding GaN;Applied Physics Letters;2022-04-04

3. Analysis of the Effects of High-Energy Electron Irradiation of GaN High-Electron-Mobility Transistors Using the Voltage-Transient Method;IEEE Transactions on Electron Devices;2021-08

4. Spectra of the Gallium Nitride Growth Traps;Russian Physics Journal;2020-04

5. Features of Radiation Changes in Electrical Properties of InAlN/GaN Hemts;Russian Physics Journal;2020-01

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