Capacitance-spectroscopy identification of a key defect in N-degraded GalnNAs solar cells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1884267
Reference19 articles.
1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
2. Room-Temperature Pulsed Operation of GaInNAs Laser Diodes with Excellent High-Temperature Performance
3. 1-eV solar cells with GaInNAs active layer
4. InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs
5. Breakeven criteria for the GaInNAs junction in GaInP/GaAs/GaInNAs/Ge four-junction solar cells
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