A Thin In 2 S 3 Interfacial Layer for Reducing Defects and Roughness of Cu 2 ZnSn(S,Se) 4 Thin‐Film Solar Cells
Author:
Affiliation:
1. Department of Materials Science and Engineering Seoul National University 08826 Seoul Republic of Korea
2. Research Institute of Advanced Materials (RIAM) Seoul National University 08826 Seoul Republic of Korea
Funder
National Research Foundation of Korea
Publisher
Wiley
Subject
General Energy,General Materials Science,General Chemical Engineering,Environmental Chemistry
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/cssc.202102350
Reference47 articles.
1. Compositional and Interfacial Modification of Cu2 ZnSn(S,Se)4 Thin-Film Solar Cells Prepared by Electrochemical Deposition
2. Cu2ZnSnS4 solar cells with over 10% power conversion efficiency enabled by heterojunction heat treatment
3. Effect of solid-H2S gas reactions on CZTSSe thin film growth and photovoltaic properties of a 12.62% efficiency device
4. Characteristics of In-Substituted CZTS Thin Film and Bifacial Solar Cell
5. Improved interfacial properties of electrodeposited Cu 2 ZnSn(S,Se) 4 thin‐film solar cells by a facile post‐heat treatment process
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2. Current Status and Future Prospects of Kesterite Cu2ZnSn(S,Se)4 (CZTSSe) Thin Film Solar Cells Prepared via Electrochemical Deposition;ChemElectroChem;2024-02-09
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