Minority carrier capture at DX centers in AlGaSb Schottky diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368783
Reference23 articles.
1. Deep donor levels (DXcenters) in III‐V semiconductors
2. The DX Center: How Complicated Can a Point Defect Be?
3. Theory of the Atomic and Electronic Structure ofDXCenters in GaAs andAlxGa1−xAsAlloys
4. Energetics ofDX-center formation in GaAs andAlxGa1−xAs alloys
5. Long‐lifetime photoconductivity effect inn‐type GaAlAs
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Transition from Positive to Negative Photoconductance in Doped Hybrid Perovskite Semiconductors;Advanced Optical Materials;2019-08-20
2. Determination of the occupancy level of the DX center resonant with the conduction band in Te-doped AlGaSb;Journal of Applied Physics;2002-03
3. Surface states on n-type Al[sub 0.24]Ga[sub 0.76]As characterized by deep-level transient spectroscopy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2001
4. Photocapacitive detection of hole emission from DX center in n-type Al0.3Ga0.7As doped with Te;Journal of Applied Physics;2000-01
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