Photocapacitive detection of hole emission from DX center in n-type Al0.3Ga0.7As doped with Te
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.371848
Reference24 articles.
1. Some Properties of a Double Acceptor Center in CdTe
2. Effect of Te and S Donor Levels on the Properties ofGaAs1−xPxnear the Direct-Indirect Transition
3. Trapping characteristics and a donor-complex (DX) model for the persistent-photoconductivity trapping center in Te-dopedAlxGa1−xAs
4. Energetics ofDX-center formation in GaAs andAlxGa1−xAs alloys
5. Deep donor levels (DXcenters) in III‐V semiconductors
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Alloy splitting of Te-DX in AlxGa1−xAs analysis using the deep level transient spectroscopy technique;Microelectronics Journal;2006-07
2. Electric field effect on the electron emission from Te-DX in AlxGa1−xAs;Materials Science and Engineering: C;2006-03
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