Separation of bulk and surface electron transport in metamorphic InAs layers using quantitative mobility spectrum analysis
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2970045
Reference18 articles.
1. High-performance, 0.6-eV, Ga[sub 0.32]In[sub 0.68]As/InAs[sub 0.32]P[sub 0.68] thermophotovoltaic converters and monolithically interconnected modules
2. High-performance, lattice-mismatched InGaAs/InP monolithic interconnected modules (MIMs)
3. 0.6-eV bandgap In/sub 0.69/Ga/sub 0.31/As thermophotovoltaic devices grown on InAs/sub y/P/sub 1-y/ step-graded buffers by molecular beam epitaxy
4. High-mobility two-dimensional electron gas in InAlAs∕InAs heterostructures grown on virtual InAs substrates by molecular-beam epitaxy
5. Transport coefficients of InAs epilayers
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1. Influence of layer transfer and thermal annealing on the properties of InAs-On-Insulator films;Journal of Applied Physics;2020-07-07
2. Locally‐Strain‐Induced Heavy‐Hole‐Band Splitting Observed in Mobility Spectrum of p‐Type InAs Grown on GaAs;physica status solidi (RRL) – Rapid Research Letters;2020-04
3. On the pitfalls of applying isotropic mobility spectrum analysis to conductors with weak anisotropy;Journal of Applied Physics;2018-09-28
4. Surface conductivity of InAs/GaSb superlattice infrared detectors treated with thiolated self assembled monolayers;Applied Physics Letters;2016-01-04
5. InAs Nanowire Devices with Strong Gate Tunability: Fundamental Electron Transport Properties and Application Prospects: A Review;Journal of Materials Science & Technology;2015-06
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