High-mobility two-dimensional electron gas in InAlAs∕InAs heterostructures grown on virtual InAs substrates by molecular-beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2430403
Reference12 articles.
1. Improving the characteristics of an inverted HEMT by inserting an InAs layer into the InGaAs channel
2. MBE growth of double-sided doped HEMTs with an InAs layer inserted in the channel
3. 20% Efficient InGaAs/InPAs Thermophotovoltaic Cells
4. 0.6-eV bandgap In/sub 0.69/Ga/sub 0.31/As thermophotovoltaic devices grown on InAs/sub y/P/sub 1-y/ step-graded buffers by molecular beam epitaxy
5. Photoconductivity decay in metamorphic InAsP∕InGaAs double heterostructures grown on InAs[sub y]P[sub 1−y] compositionally step-graded buffers
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Structural design and molecular beam epitaxy growth of GaAs and InAs heterostructures for high mobility two-dimensional electron gas;Quantum Frontiers;2024-07-26
2. Investigating non-equilibrium carrier lifetimes in nitrogen-doped and boron-doped single crystal HPHT diamonds with an optical method;Applied Physics Letters;2018-01-08
3. Impact of Defects on the Performance of High-Mobility Semiconductor Devices;High Mobility Materials for CMOS Applications;2018
4. Sr and Mn co-doped sol-gel derived BiFeO3ceramics with enhanced magnetism and reduced leakage current;Materials Research Express;2017-01-25
5. An efficient In0.30Ga0.70N photoelectrode by decreasing the surface recombination centres in a H2SO4 aqueous solution;Journal of Physics D: Applied Physics;2013-08-09
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3