Photoconductivity decay in metamorphic InAsP∕InGaAs double heterostructures grown on InAs[sub y]P[sub 1−y] compositionally step-graded buffers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Reference15 articles.
1. 547-GHz<tex>$f_t$</tex>In<tex>$_0.7$</tex>Ga<tex>$_0.3$</tex>As–In<tex>$_0.52$</tex>Al<tex>$_0.48$</tex>As HEMTs With Reduced Source and Drain Resistance
2. Metamorphic 6.00 Å heterojunction bipolar transistors on InP by molecular-beam epitaxy
3. 40-Gbit/s OEIC on GaAs substrate through metamorphic buffer technology
4. 20% Efficient InGaAs/InPAs Thermophotovoltaic Cells
5. 0.6-eV bandgap In/sub 0.69/Ga/sub 0.31/As thermophotovoltaic devices grown on InAs/sub y/P/sub 1-y/ step-graded buffers by molecular beam epitaxy
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy;Applied Physics Letters;2013-03-04
2. Metamorphic In0.7Al0.3As/In0.69Ga0.31As thermophotovoltaic devices grown on graded InAsyP1−y buffers by molecular beam epitaxy;Solid-State Electronics;2009-01
3. Metamorphic InAsyP1−y (y=0.30–0.75) and AlδIn1−δAsyP1−y buffer layers on InP substrates;Applied Physics Letters;2007-05-21
4. High-mobility two-dimensional electron gas in InAlAs∕InAs heterostructures grown on virtual InAs substrates by molecular-beam epitaxy;Applied Physics Letters;2007-01
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