Influence of neighboring coupling on metal-insulator-semiconductor (MIS) deep-depletion tunneling current via Schottky barrier height modulation mechanism-Reference-Cited by-同舟云学术

Influence of neighboring coupling on metal-insulator-semiconductor (MIS) deep-depletion tunneling current via Schottky barrier height modulation mechanism

Published:2017-04-21 Issue:15 Volume:121 Page:154504
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Yang Ming-Han¹,Hwu Jenn-Gwo¹^ORCID

Affiliation:

1. Graduate Institute of Electronics Engineering/Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4981891

Reference20 articles.

1. Minority carrier MIS tunnel diodes and their application to electron- and photo-voltaic energy conversion—II. Experiment

2. Effects of conducting defects on resistive switching characteristics of SiNx-based resistive random-access memory with MIS structure

3. Physical mechanism of fin-gate AlGaN/GaN MIS-HEMT: Vth model

4. Sensitivity Enhancement of Metal-Oxide-Semiconductor Tunneling Photodiode with Trapped Electrons in Ultra-Thin SiO2 Layer

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3. Light-to-Dark Current Ratio Enhancement on MIS Tunnel Diode Ambient Light Sensor by Oxide Local Thinning Mechanism and Near Power-Free Neighboring Gate;IEEE Transactions on Electron Devices;2018-05

4. Tunable Negative Differential Resistance in MISIM Tunnel Diodes Structure With Concentric Circular Electrodes Controlled by Designed Substrate Bias;IEEE Transactions on Electron Devices;2017-12