Hole trap level in Pt‐Ti/p‐InGaAs/n‐InP heterostructures due to rapid thermal processing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104010
Reference15 articles.
1. Pt/Ti/p‐InGaAsP nonalloyed ohmic contact formed by rapid thermal processing
2. Pt/Ti/p‐In0.53Ga0.47As low‐resistance nonalloyed ohmic contact formed by rapid thermal processing
3. Pt/Ti ohmic contacts to ultrahigh carbon‐dopedp‐GaAs formed by rapid thermal processing
4. New semi‐insulating InP: Titanium midgap donors
5. Characterization of deep‐level defects in In1−xGaxAs/InP
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electrical characterization of deep levels existing in Mg-Si- and Mg-P-Si-implanted n InP junctions;Semiconductor Science and Technology;1998-04-01
2. Deep levels in p+-n junctions fabricated by rapid thermal annealing of Mg or Mg/P implanted InP;Journal of Applied Physics;1997-04
3. Deep‐level transient spectroscopy and electrical characterization of ion‐implantedp‐njunctions into undoped InP;Journal of Applied Physics;1995-11
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