Deep‐level transient spectroscopy and electrical characterization of ion‐implantedp‐njunctions into undoped InP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.359710
Reference37 articles.
1. Electrical and optical nonuniformity of Si‐implanted and rapid thermal annealed InP:Fe
2. Two‐step rapid thermal annealing of Si‐implanted InP:Fe
3. High carrier concentration in InP by Si+and P+dual implantations
4. The origin of the ∼0.75 eV photoluminescence emission band in ion‐implanted InP
5. Ion-implanted p–n junction indium-phosphide impatt diodes
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1. InGaAsP avalanche photodetectors for non-gated 1.06 micron photon-counting receivers;SPIE Proceedings;2007-04-27
2. Thermal annealing study of 1 MeV electron-irradiation-induced defects in n+p InGaP diodes and solar cells;Journal of Applied Physics;2002-02-15
3. Analysis of Radiation-Induced Defects in InGaP Materials and Solar Cells;Defect and Diffusion Forum;2001-11
4. High-quality Si-implanted In0.53Ga0.47As epitaxial layers and their application to n+p junction devices;Journal of Applied Physics;2000-04
5. Development and Applications of a New Deep Level Transient Spectroscopy Method and New Averaging Techniques;Advances in Imaging and Electron Physics;1999
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