Electrical and optical nonuniformity of Si‐implanted and rapid thermal annealed InP:Fe
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96855
Reference24 articles.
1. Growth of Dislocation-Free Undoped InP Crystals
2. Control of dislocation structures in LEC single crystal InP
3. Thermal analysis of LEC InP growth
4. Effect of Dislocations on Sheet Carrier Concentration of Si-Implanted, Semi-Insulating, Liquid-Encapsulated Czochralski Grown GaAs
5. Electrical uniformity for Si‐implanted layer of completely dislocation‐free and striation‐free GaAs
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Detailed defect study in proton irradiated InP/Si solar cells;Journal of Applied Physics;1999-10
2. Cathodoluminescence Study of Heavily Proton Irradiated Heteroepitaxial n+-p InP/Si Solar Cells;Solid State Phenomena;1998-12
3. Component Evaporation, Defect Annealing, and Impurity Diffusion in the III–V Semiconductors;Rapid Thermal Processing of Semiconductors;1997
4. Deep‐level transient spectroscopy and electrical characterization of ion‐implantedp‐njunctions into undoped InP;Journal of Applied Physics;1995-11
5. Rapid Isothermal Processing (RIP);Handbook of Compound Semiconductors;1995
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