The origin of the ∼0.75 eV photoluminescence emission band in ion‐implanted InP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351374
Reference16 articles.
1. An investigation of the deep level photoluminescence spectra of InP(Mn), InP(Fe), and of undoped InP
2. Identification of the residual acceptors in undoped high purity InP
3. Deep radiative levels in as‐grown and implanted rapid thermal annealed InP
4. Deep radiative levels in InP
5. Stoichiometric disturbances in ion implanted compound semiconductors
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Photoluminescence of as-grown and hydrogenated carbon-doped indium phosphide;Semiconductor Science and Technology;1998-06-01
2. Electrical characterization of deep levels existing in Mg-Si- and Mg-P-Si-implanted n InP junctions;Semiconductor Science and Technology;1998-04-01
3. Characterization of surface damage in dry-etched InP;Semiconductor Science and Technology;1997-06-01
4. Chapter 3 Photoluminescence and Raman Scattering of Ion Implanted Semiconductors. Influence of Annealing;Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization;1997
5. Electrical and optical characterisation of silicon and silicon/phosphorus implantsin InP doped with iron;Materials Science and Technology;1995-11
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