Characterization of deep‐level defects in In1−xGaxAs/InP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341965
Reference16 articles.
1. Ga<inf>0.47</inf>In<inf>0.53</inf>As: A ternary semiconductor for photodetector applications
2. Characterization of InP/GaInAs/InP heterostructures grown by organometallic vapor phase epitaxy for high-speed p-i-n photodiodes
3. A study of deep levels by transient spectroscopy onp‐type liquid‐phase‐epitaxial GaxIn1−xAsyP1−ygrown on semi‐insulating InP
4. Postgrowth heat-treatment effects in high-purity liquid-phase-epitaxial In0.53Ga0.47As
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1. Impact of band to band tunneling in In0.53Ga0.47As tunnel diodes on the deep level transient spectra;Applied Physics Letters;2018-12-03
2. Optical properties study of InxGa1−xAs/GaAs structures using spectral reflectance, photoreflectance and near-infrared photoluminescence;Superlattices and Microstructures;2014-09
3. Deep donor-acceptor pair recombination in InGaAs-based heterostructures grown on InP substrates;Journal of Applied Physics;2005-11
4. Capability of plasma‐enhanced chemical‐vapor‐deposited SiO2films as diffusion barriers on InGaAs;Journal of Applied Physics;1994-07-15
5. Cap and capless annealing of Fe‐implanted InGaAs;Journal of Applied Physics;1993-05-15
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