Optoelectronic device performance on reduced threading dislocation density GaAs/Si-Reference-Cited by-同舟云学术

Optoelectronic device performance on reduced threading dislocation density GaAs/Si

Published:2001-04-15 Issue:8 Volume:89 Page:4365-4375
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Taylor P. J.,Jesser W. A.,Benson J. D.,Martinka M.,Dinan J. H.,Bradshaw J.,Lara-Taysing M.,Leavitt R. P.,Simonis G.,Chang W.,Clark W. W.,Bertness K. A.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1347000

Reference32 articles.

1. Defect Characterization of GaAs on Si Grown by MOCVD

2. GaAs‐on‐Si: Improved growth conditions, properties of undoped GaAs, high mobility, and fabrication of high‐performance AlGaAs/GaAs selectively doped heterostructure transistors and ring oscillators

3. GaAs on Si and related systems: Problems and prospects

4. Characterization of the MBE growth of GaAs/Si(100) as a function of epilayer thickness

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