The relationship between depth-resolved composition and strain relaxation in InAlN and InGaN films grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4825143
Reference17 articles.
1. Mosaic Structure of Ternary Al 1-xInxN Films on GaN Grown by Metalorganic Vapor Phase Epitaxy
2. The importance of lattice mismatch in the growth of GaxIn1−xP epitaxial crystals
3. Effect of Lattice Mismatch on the Solidus Compositions of GaxIn1-xP Liquid Phase Epitaxial Crystals
4. Auto lattice matching effect for allnas grown by MBE at high substrate temperature
5. Compositional pulling effects inInxGa1−xN/GaNlayers: A combined depth-resolved cathodoluminescence and Rutherford backscattering/channeling study
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1. In Situ Synchrotron X-ray Diffraction Reciprocal Space Mapping Measurements in the RF-MBE Growth of GaInN on GaN and InN;Crystals;2019-11-28
2. Reduction of nonradiative recombination in InGaN epilayers grown with periodical dilute hydrogen carrier gas;Applied Surface Science;2019-11
3. In Al1–N/Al0.53Ga0.47N multiple quantum wells on Al0.5Ga0.5N buffer with variable in-plane lattice parameter;Journal of Luminescence;2018-02
4. The characteristics of MBE-grown InxAl1−xN/GaN surface states;Applied Physics Letters;2016-08-22
5. The influence of voltage applied between the electrodes on optical and morphological properties of the InGaN thin films grown by thermionic vacuum arc;Scanning;2015-09-18
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