The influence of voltage applied between the electrodes on optical and morphological properties of the InGaN thin films grown by thermionic vacuum arc
Author:
Affiliation:
1. Department of Physics; Eskişehir Osmangazi University; Meşelik Campus; Turkey
2. Primary Science Education Department; Bayburt University; Turkey
Publisher
Wiley
Subject
Instrumentation,Atomic and Molecular Physics, and Optics
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/sca.21237/fullpdf
Reference35 articles.
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2. InxGa 1− xN refractive index calculations;Anani;Microelectronics J,2007
3. Intrinsic and Zn-, Ce-, Tb-, Er-, Sm-, and Eu-Activated photoluminescence of pseudoamorphous GaN and InGaN thin films;Andreev;Phys Solid State,2003
4. A thickness-mode AlGaN/GaN resonant body high electron mobility transistor;Ansari;IEEE Trans Electron Devices,2014
5. Pseudomorphic thick InGaN growth with a grading interlayer by metal organic chemical vapor deposition for InGaN/GaN p-i-n solar cells;Bae;J Crystal Growth,2014
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