Effect of an augmented oxygen implant on electron trapping in buried oxides
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111313
Reference9 articles.
1. Radiation-Induced Oxide Charge Distributions in Simox Buried Oxides
2. Subthreshold slope of thin-film SOI MOSFET's
3. Electron trapping in SiO/sub 2/ formed by oxygen implantation
4. A study of Si implanted with oxygen using spectroscopic ellipsometry
5. Electron trapping in SiO2 at 295 and 77 °K
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2. Research on metastable electron traps in the modified SOI materials induced by Si ion implantation;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2008-03
3. Research on ion implantation effect on SIMOX material modification technique by X-ray photoelectron spectroscopy;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2007-04
4. A study on the total-dose response for modified silicon-on-insulator materials with the pseudo-MOS method;Semiconductor Science and Technology;2006-01-26
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