n-ZnO/p-4H-SiC diode: Structural, electrical, and photoresponse characteristics
Author:
Affiliation:
1. Institute of Electron Technology, Al. Lotników 32/46 PL-02-668 Warsaw, Poland
2. Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46 PL-02-668 Warsaw, Poland
Funder
EU 7th Framework Program
Polish National Center for Research and Development
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4930307
Reference29 articles.
1. ZnO Devices and Applications: A Review of Current Status and Future Prospects
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4. Synthesis of p-type NiO/n-type ZnO heterostructure and its enhanced photocatalytic activity
5. ZnO epitaxy on SiC() substrate: Comparison with ZnO/SiC(0001) heterostructure
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