Trap levels in the atomic layer deposition-ZnO/GaN heterojunction—Thermal admittance spectroscopy studies-Reference-Cited by-同舟云学术

Trap levels in the atomic layer deposition-ZnO/GaN heterojunction—Thermal admittance spectroscopy studies

Published:2013-05-21 Issue:19 Volume:113 Page:194504
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Krajewski Tomasz A.,Stallinga Peter,Zielony Eunika,Goscinski Krzysztof,Kruszewski Piotr,Wachnicki Lukasz,Aschenbrenner Timo,Hommel Detlef,Guziewicz Elzbieta,Godlewski Marek

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4805655

Reference34 articles.

1. Hydrogen-selective sensing at room temperature with ZnO nanorods

2. Detection of CO using bulk ZnO Schottky rectifiers

3. Advances in Hydrogen, Carbon Dioxide, and Hydrocarbon Gas Sensor Technology Using GaN and ZnO-Based Devices

4. Preparation of ZnO Thin Films Deposited by Plasma Chemical Vapor Deposition for Application to Ultraviolet-cut Coating

5. The properties of tris (8-hydroxyquinoline) aluminum organic light emitting diode with undoped zinc oxide anode layer

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