Advances in Hydrogen, Carbon Dioxide, and Hydrocarbon Gas Sensor Technology Using GaN and ZnO-Based Devices-Reference-Cited by-同舟云学术

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Advances in Hydrogen, Carbon Dioxide, and Hydrocarbon Gas Sensor Technology Using GaN and ZnO-Based Devices

Published:2009-06-15 Issue:6 Volume:9 Page:4669-4694
ISSN:1424-8220
Container-title:Sensors
language:en
Short-container-title:Sensors

Author:

Anderson Travis,Ren Fan,Pearton Stephen,Kang Byoung Sam,Wang Hung-Ta,Chang Chih-Yang,Lin Jenshan

Publisher

MDPI AG

Subject

Electrical and Electronic Engineering,Biochemistry,Instrumentation,Atomic and Molecular Physics, and Optics,Analytical Chemistry

Link

http://www.mdpi.com/1424-8220/9/6/4669/pdf

Reference110 articles.

1. 9.2W/mm (13.8W) AlGaN/GaN HEMTs at 10 GHz and 55 V drain bias;Zhang;Electron. Lett.,2003

2. High breakdown voltage AlGaN-GaN Power-HEMT design and high current density switching behavior;Saito;IEEE Trans. Electron. Dev.,2003

3. Correlation of device performance and defects in AlGaN/GaN high-electron mobility transistors;Zhang;J. Electron. Mater.,2003

4. DC, RF, and, microwave noise performance of AlGaN-GaN field effect transistors dependence of aluminum concentration;Lu;IEEE Trans. Electron. Dev.,2003

5. Investigation of the impact of Al mole-fraction on the consequences of RF stress on AlxGa1-xN/GaN MODFETs;Valizadeh;IEEE Trans. Electron. Dev.,2005

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4. A novel yttria-doped ZrO2 based conductometric sensor for hydrogen leak monitoring;International Journal of Hydrogen Energy;2022-02

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