Study of molecular‐beam epitaxially grown GexSi1−x/Si layers by Raman scattering
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341401
Reference11 articles.
1. Physics and applications of GexSi1-x/Si strained-layer heterostructures
2. Strain-Induced Two-Dimensional Electron Gas in Selectively DopedSi/SixGe1−xSuperlattices
3. Modulation doping in Ge(x)Si(1−x)/Si strained layer heterostructures: Effects of alloy layer thickness, doping setback, and cladding layer dopant concentration
4. Band alignments of coherently strained GexSi1−x/Si heterostructures on 〈001〉 GeySi1−ysubstrates
5. Stability of semiconductor strained‐layer superlattices
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2. Depth profiling of strain and defects in Si∕Si1−xGex∕Si heterostructures by micro-Raman imaging;Journal of Applied Physics;2006-10
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