Hetero-epitaxial crystal growth of CdTe on GaAs substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. New materials for radiation hard semiconductor dectectors
2. Epitaxial CdTe films on GaAs/Si and GaAs substrates
3. Growth and Characterization of Thick (100) CdTe Layers on (100) GaAs and (100) GaAs/Si Substrates by Metalorganic Vapor Phase Epitaxy
4. Strain relaxation of CdTe(100) layers grown by hot‐wall epitaxy on GaAs(100) substrates
5. A novel “multi-tube” vapour growth system and its application to the growth of bulk crystals of cadmium telluride
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1. Modular Approach for Metal–Semiconductor Heterostructures with Very Large Interface Lattice Misfit: A First-Principles Perspective;Crystal Growth & Design;2016-03-24
2. Investigation of Strain-Relaxation Characteristics of Nitrides Grown on Si(110) by Metalorganic Chemical Vapor Deposition Using X-ray Diffraction;Japanese Journal of Applied Physics;2013-08-01
3. A Structural Investigation of CdTe(001) Thin Films on GaAs/Si(001) Substrates by High-Resolution Electron Microscopy;Journal of Electronic Materials;2012-02-24
4. One-step fast deposition of thick epitaxial CdZnTe film on (001)GaAs by close-spaced sublimation;CrystEngComm;2012
5. Morphology and reconstructions of polar CdTe(111)A,B surfaces by scanning tunneling microscopy;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2011-01
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