Hole mobility in AlxGa1−xSb grown by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1506192
Reference15 articles.
1. Disorder scattering in solid solutions of III–V semiconducting compounds
2. Doping characteristics and electrical properties of Be-doped p-type AlxGa1−xAs by liquid phase epitaxy
3. Hall effect studies in germanium doped AlxGa1−xAs
4. Alloy scattering potential inp‐type Ga1−xAlxAs
5. Alloy scattering inp‐type AlxGa1−xAs
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2. Novel Energy-Dependent Effects Revealed in GeV Heavy-Ion-Induced Transient Measurements of Antimony-Based III-V HEMTs;IEEE Transactions on Nuclear Science;2010-12
3. Carrier compensation and scattering mechanisms in Si-doped InAsyP1−y layers grown on InP substrates using intermediate InAsyP1−y step-graded buffers;Journal of Applied Physics;2006-09-15
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